Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist
نویسندگان
چکیده
منابع مشابه
Sub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist
We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...
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The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than dev...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2009
ISSN: 1071-1023
DOI: 10.1116/1.3250204